TSUS4400 查看數據表（PDF） - Vishay Semiconductors
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TSUS4400 Datasheet PDF : 5 Pages
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www.vishay.com
TSUS4400
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
94 8636
DESCRIPTION
TSUS4400 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue tinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): ∅ 3
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 18°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
TSUS4400
Ie (mW/sr)
15
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
± 18
λp (nm)
950
tr (ns)
800
ORDERING INFORMATION
ORDERING CODE
TSUS4400
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp/T = 0.5, tp = 100 μs
tp = 100 μs
t ≤ 5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
5
100
200
2
170
100
-40 to + 85
-40 to +100
260
300
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 01-Aug-14
1
Document Number: 81054
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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