2N3232 查看數據表（PDF） - New Jersey Semiconductor
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2N3232 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 200mA ; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
lc-3A;VCE=10V
ICEV
Collector Cutoff Current
VCE= 60V; VBE(om= 1.5V
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
fr
Current Gain-Bandwidth Product
VEB= 7.0V; lc= 0
lc=3A;VCE=10V
lc= 0.5A; VCE= 4V; f= 1 .0MHz
2N3232
MIN MAX UNIT
60
V
2.5
V
3.5
V
1
mA
5.0
mA
18
55
1.0
MHz
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