2N2219A 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N2219A Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2N2219A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR) CEO Collector-Emitter Breakdown Voltage IC=10mA ; IB=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE=1mA ; IC=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 150mA; IB= 15mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 150mA; IB= 15mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 50V; IE=0
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE-1
DC Current Gain
IC= 0.1mA ; VCE= 10V
hFE-2
DC Current Gain
IC= 1mA ; VCE= 10V
hFE-3
DC Current Gain
IC= 10mA ; VCE= 10V
hFE-4
DC Current Gain
IC= 150mA ; VCE= 10V
hFE-5
DC Current Gain
IC= 500mA ; VCE= 10V
fT
Current Gain-Bandwidth Product
IC= 20mA ; VCE= 20V;ftest= 100MHz
COB
Output Capacitance
Pulsed: Pulse duration = 300 s, duty cycle 1 %
Switching Times
td
Delay Time
IE= 0 ; VCB= 10V; ftest= 1.0MHz
tr
Rise Time
tstg
Storage Time
IC= 150mA; IB1= -IB2= 15mA
tf
Fall Time
MIN MAX UNIT
40
V
6
V
0.3
V
1.0
V
1.2
V
2.0
V
1.3
uA
30
nA
35
50
75
100 300
30
300
MHz
8
pF
10
ns
25
ns
200 ns
60
ns
SPTECH website：www.superic-tech.com
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