2N5491 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N5491 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; RBE= 100Ω
VCEV(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; VBE= -1.5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2 A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
ICEV
Collector Cutoff Current
ICER
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2A ; VCE= 4V
VCE= 55V; VBE= -1.5V
VCE= 55V; VBE= -1.5V;TC= 125℃
VCE= 40V; RBE= 100Ω
VCE= 40V; RBE= 100Ω; TC= 125℃
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 2A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 2A; IB1= -IB2= 0.2A
2N5491
MIN MAX UNIT
40
V
50
V
60
V
1.0
V
1.1
V
1.0
5.0
mA
2.0
3.5
mA
1.0
mA
20
100
0.8
MHz
5
μs
15
μs
SPTECH website：www.superic-tech.com
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