SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
DESCRIPTION
·Continuous Collector Current-IC= -4A
·Collector Power Dissipation-
: PC= 75W @TC= 25℃
·Complement to Type 2N3054A
APPLICATIONS
·Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-90
V
VCER
Collector-Emitter Voltage RBE= 100Ω
-60
V
VCEO
Collector-Emitter Voltage
-55
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
-2
A
PC
Collector Power Dissipation@TC=25℃
75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.33 ℃/W
SPTECH website:www.superic-tech.com
2N6049
1