2N6257 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6257 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 15-75@IC = 8A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5 V(Max)@ IC = 8A
APPLICATIONS
·Designed for linear amplifiers, series pass regulators, and
inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
20
A
IB
Base Current
5
A
PC
Collector Power Dissipation@TC=25℃ 150
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
SPTECH website：www.superic-tech.com
2N6257
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