2N6257 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6257 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 4A
VBE(on) Base-Emitter On Voltage
IC= 8A; VCE= 4V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 20V; IB= 0
VCE= 50V; VBE(off)= -1.5V
VCE= 50V; VBE(off)= -1.5V, TC=150℃
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 8A ; VCE= 4V
hFE-2
DC Current Gain
IC= 20A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 4V
2N6257
MIN MAX UNIT
40
V
1.0
V
4.0
V
1.7
V
1.5 mA
2.0
10
mA
10
mA
15
75
5
0.8
MHz
SPTECH website：www.superic-tech.com
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