2N3715 查看數據表（PDF） - Microsemi Corporation

零件编号

产品描述 (功能)

生产厂家

2N3715

NPN HIGH POWER SILICON TRANSISTOR

Microsemi Corporation 

2N3715, 2N3716 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

Collector-Emitter Cutoff Current

VCE = 60 Vdc

2N3715

VCE = 80 Vdc

ON CHARACTERISTICS (3)

2N3716

Forward-Current Transfer Ratio

IC = 1.0 Adc, VCE = 2.0 Vdc

IC = 3.0 Adc, VCE = 2.0 Vdc

IC = 5.0 Adc, VCE = 2.0 Vdc

IC = 10 Adc, VCE = 4.0 Vdc

Collector-Emitter Saturation Voltage

IC = 5.0 Adc, IB = 0.5 Adc

IC = 10 Adc, IB = 2.0 Adc

Base-Emitter Saturation Voltage

IC = 5.0 Adc, IB = 0.5 Adc

IC = 10 Adc, IB = 2.0 Adc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short Circuit

Forward Current Transfer Ratio

IC = 0.5 Adc, VCE = 10 Vdc, f = 100 kHz – 1.0 MHz

Forward Current Transfer Ratio

IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz

Output Capacitance

VCB = 10 Vdc, IE = 0, f = 1.0 MHz

SAFE OPERATING AREA

DC Tests

TC = +250C, 1 Cycle, t ≥ 1.0 s

Test 1

VCE = 15 Vdc, IC = 10 Adc

Test 2

VCE = 40 Vdc, IC = 3.75 Adc

Test 3

VCE = 55 Vdc, IC = 0.9 Adc

2N3715

VCE = 65 Vdc, IC = 0.9 Adc

2N3716

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

ICES

hFE

VCE(sat)

VBE(sat)

hfe

hfe

Cobo

Min.

Max.

1.0

1.0

Unit

mAdc

50

150

30

120

10

5.0

1.0

Vdc

2.5

1.5

3.0

Vdc

4.0

20

30

300

500

pF

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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