2N3233 查看數據表（PDF） - New Jersey Semiconductor
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2N3233 Datasheet PDF : 2 Pages
| |||
, Una.
20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N3233
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE= 18-55@ lc= 3A
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ lc = 3A
• Collector-Emitter Sustaining Voltage-
: VCEO(susr 100V(Min)
APPLICATIONS
• Designed for general purpose high power switch and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
lc
Collector Current-Continuous
7.5
A
PC
Collector Power Dissipation@Tc=25°C
117
W
Tj
Junction Temperature
200
'C
Tstg
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
MAX UNIT
1.5 •c/w
^ v , J *Msl
3
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
2
TO-3 package
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39-00
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C
'.80 8.30
D
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E
.40 .60
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H
546
K 1 .40 1350
L 11575 1705
N 1<340 19.62
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V
*.30 450
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of eoing
to press. I lovvever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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