2N6043 查看數據表（PDF） - Inchange Semiconductor
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2N6043 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6043 2N6044 2N6045
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6043
2N6044
2N6045
IC=30mA, IB=0
VCEsat-1
Collector-emitter
saturation voltage
2N6043/6044 IC=4A ,IB=16mA
2N6045
IC=3A ,IB=12mA
VCEsat-2 Collector-emitter saturation voltage IC=8A ,IB=80mA
VBEsat Base-emitter saturation voltage
IC=8A ,IB=80mA
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
ICBO
Collector cut-off current
ICEO
Collector cut-off current
ICEO
Collector cut-off current
VCB=Rated VCB, IE=0
VCE=RatedVCE, VBE=-1.5V
TC=150℃
VCE=Rated VCE, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
2N6043/6044 IC=4A ; VCE=4V
2N6045
IC=3A ; VCE=4V
hFE-2
DC current gain
IC=8A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V,f=0.1MHz
MIN TYP. MAX UNIT
60
80
V
100
2.0
V
4.0
V
4.5
V
2.8
V
20
μA
20
200
μA
20
μA
2.0
mA
1000
20000
100
200
pF
2
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