2N6512 查看數據表（PDF） - Inchange Semiconductor

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2N6512

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2N6512

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0

300

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A

1.5

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A ;IB= 3A

2.5

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

1.7

V

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

3.0 mA

hFE

DC Current Gain

IC= 4A; VCE= 3V

10

50

VCE= 35V,t= 1.0s,Nonrepetitive

3.16

A

Is/b

Second Breakdown Collector

Current with Base Forward Biased

VCE= 200V,t= 1.0s,Nonrepetitive 0.1

A

COB

Collector Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

100

pF

Switching Times

td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall Time

VCC= 200V;

IC= 4A; IB1= -IB2= 0.8A

0.2 μs

1.5 μs

5.0 μs

1.5 μs

isc website：www.iscsemi.com

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