2N6486 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6486 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·DC Current Gain Specified to 15 Amperes-
: hFE =20-150@ IC= 5.0A
=5.0(Min)@ IC=15A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 40V(Min)
·Complement to Type 2N6489
APPLICATIONS
·Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
15
IB
Base Current
5
Collector Power Dissipation
@ TC=25℃
57
PC
Collector Power Dissipation
@ Ta=25℃
1.8
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.67 ℃/W
SPTECH website：www.superic-tech.com
2N6486
1
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