2N3799X 查看數據表（PDF） - TT Electronics.
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2N3799X Datasheet PDF : 3 Pages
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SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N3799X
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
IC = -10mA
IC = -10µA
IE = -10µA
VCB = -50V
IB = 0
IE = 0
IC = 0
IE = 0
TA = 150°C
IEBO
Emitter Cut-Off Current
VEB = -4V
IC = 0
VCE(sat)(1)
Collector-Emitter Saturation
Voltage
IC = -100µA
IC = -1.0mA
IB = -10µA
IB = -100µA
VBE(sat)(1)
Base-Emitter Saturation
Voltage
IC = -100µA
IC = -1.0mA
IB = -10µA
IB = -100µA
VBE(on)
Base-Emitter On Voltage
IC = -100µA
VCE = -5V
IC = -1.0µA
VCE = -5V
IC = -10µA
VCE = -5V
hFE(1)
Forward-current transfer
ratio
IC = -100µA
IC = -500µA
VCE = -5V
TA = -55°C
VCE = -5V
IC = -1.0mA
VCE = -5V
IC = -10mA
VCE = -5V
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Min. Typ Max. Units
-50
-60
V
-5
-0.01
µA
-10
-20
nA
-0.2
-0.25
-0.7
V
-0.8
-0.7
75
225
300
150
300
300
250
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8240
Website: http://www.semelab-tt.com
Issue 2
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