2N4232A 查看數據表（PDF） - Central Semiconductor
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2N4232A Datasheet PDF : 2 Pages
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2N4231A 2N4232A 2N4233A NPN
2N6312 2N6313 2N6314 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312
series devices are complementary silicon power
transistors, manufactured by the epitaxial base process,
designed for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
2N4231A 2N4232A 2N4233A
SYMBOL 2N6312 2N6313 2N6314
VCBO
40
60
80
VCEO
40
60
80
VEBO
5.0
IC
5.0
ICM
10
IB
2.0
PD
75
TJ, Tstg
-65 to +200
JC
2.32
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEO
VCE=30V (2N4231A, 2N6312)
ICEO
VCE=50V (2N4232A, 2N6313)
ICEO
VCE=70V (2N4233A, 2N6314)
ICEV
VCE=Rated VCEO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
IEBO
VEB=5.0V
BVCEO IC=100mA, (2N4231A, 2N6312)
40
BVCEO IC=100mA, (2N4232A, 2N6313)
60
BVCEO IC=100mA, (2N4233A, 2N6314)
80
VCE(SAT) IC=1.5A, IB=0.15A
VCE(SAT) IC=3.0A, IB=0.3A
VCE(SAT) IC=5.0A, IB=1.25A
VBE(ON) VCE=2.0V, IC=1.5A
hFE
VCE=2.0V, IC=0.5A
40
hFE
VCE=2.0V, IC=1.5A
25
hFE
VCE=2.0V, IC=3.0A
10
hFE
VCE=4.0V, IC=5.0A
4.0
hfe
VCE=10V, IC=0.5A, f=1.0kHz
20
fT
VCE=10V, IC=0.5A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=100kHz
MAX
50
1.0
1.0
1.0
0.1
1.0
0.5
0.7
2.0
4.0
1.4
100
300
UNITS
μA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
MHz
pF
R1 (2-September 2014)
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