2N7081 查看數據表（PDF） - Inchange Semiconductor

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2N7081

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

isc Product Specification

2N7081

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA

VGS(TH) Gate Threshold Voltage

VDS= VGS; ID= 0.25mA

RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 7.7A

IGSS

Gate Source Leakage Current

VGS=±20V;VDS= 0

IDSS

Zero Gate Voltage Drain Current

VDS= 80V; VGS= 0

VSD

Diode Forward Voltage

IF= 11A; VGS= 0

MIN MAX UNIT

100

V

2

4

V

0.15

Ω

±100 nA

25

uA

2.5

V

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