2N4014 查看數據表（PDF） - STMicroelectronics
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2N4014 Datasheet PDF : 6 Pages
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2N4014
HIGH-VOLTAGE, HIGH CURRENT SWITCH
DESCRIPTION
The 2N4014 is a silicon planar epitaxial transistor in
TO-18 metal case. It is a high-voltage, high current
switch used for memory applications requiring
breakdown voltages up to 50 V and operating cur-
rents to 1 A. Fast switching times are assured be-
cause of the high minimum fT (300 MHz) and tight
control on storage time.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCES
VCEO
VEBO
IC
Pto t
Tstg, Tj
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (V BE = 0)
Collector-emitter Voltage (IB = 0)
Emitter-base Voltage (IC = 0)
Collector Current
Total Power Dissipation at T amb ≤ 25 °C
at T c as e ≤ 25 °C
Storage and Junction Temperature
October 1988
V al ue
80
80
50
6
1
0.36
1.2
– 65 to 200
Unit
V
V
V
V
A
W
W
°C
1/6
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