2N4014 查看數據表（PDF） - STMicroelectronics
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2N4014 Datasheet PDF : 6 Pages
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2N4014
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
146
°C/W
Max
486
°C/W
ELECTRICAL CHARACTERISITCS(Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
ICBO
Collector Cutoff Current
(IE = 0)
VCB = 60 V
VCB = 60 V
T amb = 100 °C
V( BR)CB O Collector-base Breakdown
IC = 10 µA
80
Voltage
(IE = 0)
V(B R)CES Collector-emitter Breakdown
IC =10 µA
80
Voltage (VBE = 0)
V(BR)CE O * Collector-Emitter Breakdown
IC = 10 mA
50
Voltage (IB = 0)
V(B R)E BO Emitter-Base Breakdown Voltage IE =10 µA
6
(IC = 0)
VCE(sat)* Collector-Emitter Saturation
Voltage
IC = 10 mA
IC = 100 mA
IC = 300 mA
IC = 500 mA
IC = 800 mA
IC = 1000 mA
IB =1 mA
IB =10 mA
IB = 30 mA
IB = 50 mA
IB = 80 mA
IB = 100 mA
VBE(sat)* Base-Emitter Saturation Voltage IC = 10 mA
IB = 1 mA
IC = 100 mA
IB = 10 mA
IC = 300 mA
IB = 30 mA
IC = 500 mA
IB = 50 mA
0.9
IC = 800 mA
IB = 80 mA
IC = 1000 mA IB = 100 mA
hFE*
DC Current Gain
IC = 10 mA
VCE = 1 V
30
IC = 100 mA
VCE = 1 V
60
IC = 300 mA
VCE = 1 V
40
I C = 1000 mA VCE = 5 V
25
IC = 800 mA
VCE = 2 V
20
IC = 500 mA
VCE = 1 V
35
hfe
High Frequency Current Gain
IC = 50 mA
VCE = 10 V
3
f = 100 MHz
C CBO Collector-base Capacitance
IE = 0
f = 1 MHz
VCB = 10 V
C EBO Emitter-base Capacitance
IC = 0
f = 1 MHz
VE B = 0.5 V
to n**
Turn-on Time
IC = 500 mA
VCC = 30 V
IB = 50 mA
t o f f**
Turn-off Time
IC = 500 mA
VCC = 30 V
I B1 = – I B2 = 50 mA
* Pulsed : pulse duration = 300 ms, duty cycle = 1 %.
** See test circuit.
Typ.
0.19
0.21
0.31
0.4
0.5
0.6
0.64
0.75
0.89
1.0
1.1
60
90
60
65
40
Max.
1.7
120
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
1.2
1.5
1.7
150
10
55
35
60
Unit
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
pF
pF
ns
ns
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