2N720A 查看數據表（PDF） - New Jersey Semiconductor

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2N720A

HIGH VOLTAGE GENERAL PURPOSE

New Jersey Semiconductor 

2N720A

THERMAL DATA

""MM j-case Thermal Resistance Junction-case

Rth j-amb Thermal Resistance Junction-ambient

Max

97.2

Max

350

ELECTRICAL CHARACTERISTICS(Tamb = 25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

ICBO

Collector Cutoff Current

(IE =0)

VCB = 90 V

V(BR)CBO

Collector-base Breakdown

Voltage

(IE =0)

lc = 100 uA

V(BR)CEO*

V(BR)EBO

IEBO

VcE(sat)*

Collector-emitter Breakdown

Voltage

(In =0)

Emitter-base Breakdown

Voltage

(IE =0)

Emitter Cuttoff Current

(IE=0)

Collector-emitter Saturation

Voltage

I c = 30 mA

IE =100 |iA

VEB =5 V

I c = 50 mA

lc = 150 mA

IB = 5 mA

IB = 15 mA

VeE(sat)*1 Base-emitter Saturation

Voltage

lc = 50 mA

lc = 150mA

IB = 5 mA

IB = 15mA

hFE*

hte

DC Current Gain

High Frequency Current

Gain

lc = 100uA

lc = 10mA

lc = 150 mA

lc =50 mA

,f=20MHz

VCE = 10V

VCE = 10V

VCE = 10 V

VCE= 10 V

CCBQ

Collector-base Capacitance I E = 0

f = 1 MHz

VCB = 10V

CEBO

Emitter-base Capacitance

lc=0

f = 1 MHz

VEB = 0.5V

Pulsed : pulse duration = 300 (is, duty cycle = 1 %.

Min. Typ.

120

80

7

20

35

40

2.5

°C/W

°c/w

Max. Unit

10

nA

V

V

V

10

nA

1.2

V

5

V

0.9

V

1.3

V

-

120

-

15

pF

85

pF

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