2N3766 查看數據表（PDF） - Inchange Semiconductor
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2N3766 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3766
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 10V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 60V; IB= 0
VCB= 80V; IE= 0
VCB= 80V; IE= 0,TC=150℃
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 50mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-3
DC Current Gain
IC= 1A; VCE= 10V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V; f=10MHz
MIN MAX UNIT
60
V
1.0
V
2.5
V
1.5
V
0.7
mA
0.1
1.0
mA
0.75
mA
30
40
160
20
10
MHz
isc website：www.iscsemi.com
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