2N5052 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N5052 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Contunuous Collector Current-IC= 2A
·Power Dissipation-PD=40W @TC= 25℃
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V(Min)
APPLICATIONS
·Designed for untuned amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2.0
A
IB
Base Current
1.0
A
PD
Total Power Dissipation@TC=25℃
40
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.76 ℃/W
2N5052
SPTECH website：www.superic-tech.com
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