2N6079 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

零件编号

产品描述 (功能)

生产厂家

2N6079

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.2A; IB= 0.2A

V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 1.2A; IB= 0.2A

V BE(sat)-2 Base-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

ICBO

Collector Cutoff Current

VCB= 375V; IE= 0

ICEO

Collector Cutoff Current

VCE= 350V; IB= 0

IEBO

Emitter Cutoff Current

VEB= 9V; IC= 0

hFE

DC Current Gain

IC= 1.2A; VCE= 1V

COB

Output Capacitance

VCB= 10V;IE= 0; f= 1MHz

2N6341

MIN TYP. MAX UNIT

350

V

0.5

V

3.0

V

1.6

V

2.0

V

0.5 mA

2

mA

1

mA

12

50

150

pF

SPTECH website：www.superic-tech.com

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