2N6673 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6673 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min.)
·Fast Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Off-line power supplies
·High-voltage inverters
·Switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCEV
Collector-Emitter Voltage
650
V
VCEX Collector-Emitter Voltage
450
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
8.0
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
4
A
PC
Collector Power Dissipation@TC=25℃ 150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
SPTECH website：www.superic-tech.com
2N6673
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