2N60G-T60-R(2012) 查看數據表（PDF） - Unisonic Technologies

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2N60G-T60-R
(Rev.:2012)

2A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

2N60

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

Avalanche Current (Note 2)

Drain Current

Continuous

Pulsed (Note 2)

Single Pulsed (Note 3)

Avalanche Energy

Repetitive (Note 2)

Peak Diode Recovery dv/dt (Note 4)

VDSS

VGSS

IAR

ID

IDM

EAS

EAR

dv/dt

600

V

±30

V

2.0

A

2.0

A

8.0

A

140

mJ

4.5

mJ

4.5

V/ns

TO-220/ TO-262

54

W

Power Dissipation

TO-220F/TO-220F1

TO-251/TO-251L/TO-252

PD

(TC = 25°С)

23

44

W

W

TO-126

40

W

Junction Temperature

TJ

+150

°С

Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ

3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

PACKAGE

TO-220/ TO-262

TO-220F/TO-220F1

Junction to Ambient

TO-251/TO-251L/TO-252

TO-126

TO-220/ TO-262

Junction to Case

TO-220F/TO-220F1

TO-251/TO-251L/TO-252

TO-126

SYMBOL

θJA

θJc

RATINGS

62.5

62.5

100

89

2.32

5.5

2.87

3.12

UNIT

°С/W

°С/W

°С/W

°С/W

°С/W

°С/W

°С/W

°С/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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