2N60(2005) 查看數據表（PDF） - Unisonic Technologies
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2N60 Datasheet PDF : 8 Pages
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2N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Switching Characteristics
Turn-On Delay Time
tD (ON)
Rise Time
Turn-Off Delay Time
tR VDD =300V, ID =2.4A, RG=25Ω
tD(OFF) (Note 1,2)
Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
QG
QGS
VDS=480V, VGS=10V, ID=2.4A
(Note 1, 2)
QGD
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, ISD = 2.0 A
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
tRR VGS = 0 V, ISD = 2.4A,
QRR di/dt = 100 A/µs (Note1)
Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
MIN TYP MAX UNIT
10 30 ns
25 60 ns
20 50 ns
25 60 ns
9.0 11 nC
1.6
nC
4.3
nC
1.4 V
2.0 A
8.0 A
180
ns
0.72
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-053,E
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