2N60L-TA3-K(2012) 查看數據表（PDF） - Unisonic Technologies

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2N60L-TA3-K
(Rev.:2012)

2A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

2N60

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250μA

600

V

Drain-Source Leakage Current

IDSS

VDS = 600V, VGS = 0V

10 μA

Gate-Source Leakage Current

Forward

Reverse

IGSS

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C

ON CHARACTERISTICS

100 nA

-100 nA

0.4

V/°С

Gate Threshold Voltage

VGS(TH) VDS = VGS, ID = 250μA

2.0

4.0 V

Static Drain-Source On-State Resistance

RDS(ON) VGS = 10V, ID =1A

3.6 5 Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS =25V, VGS =0V,

f =1MHz

270 350 pF

40 50 pF

5 7 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

DRAIN-SOURCE DIODE CHARACTERISTICS

tD (ON)

tR

tD(OFF)

tF

QG

QGS

QGD

VDD =300V, ID =2.4A,

RG=25Ω (Note 1, 2)

VDS=480V, VGS=10V,

ID=2.4A (Note 1, 2)

10 30 ns

25 60 ns

20 50 ns

25 60 ns

9.0 11 nC

1.6

nC

4.3

nC

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, ISD = 2.0 A

Continuous Drain-Source Current

ISD

Pulsed Drain-Source Current

ISM

Reverse Recovery Time

trr

VGS = 0 V, ISD = 2.4A,

Reverse Recovery Charge

QRR

di/dt = 100 A/μs (Note 1)

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%

1.4 V

2.0 A

8.0 A

180

ns

0.72

μC

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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