2N60G-TF1-K 查看數據表（PDF） - Unisonic Technologies

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2N60G-TF1-K

2A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

2N60

Power MOSFET

 ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250μA

600

V

Drain-Source Leakage Current

IDSS

VDS = 600V, VGS = 0V

VDS = 480V, TC = 125°С

10 μA

100 μA

Gate-Source Leakage Current

Forward

Reverse

IGSS

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

100 nA

-100 nA

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C

0.4

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

Static Drain-Source On-State Resistance

RDS(ON) VGS = 10V, ID =1A

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS =25V, VGS =0V,

f =1MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

QGD

VDS=480V, VGS=10V,

ID=2.4A (Note 1, 2)

Turn-On Delay Time

tD (ON)

Turn-On Rise Time

Turn-Off Delay Time

tR

tD(OFF)

VDD =300V, ID =2.4A,

RG=25Ω (Note 1, 2)

Turn-Off Fall Time

tF

DRAIN-SOURCE DIODE CHARACTERISTICS

Continuous Drain-Source Current

IS

Pulsed Drain-Source Current

ISM

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, ISD = 2.0 A

Reverse Recovery Time

trr

VGS = 0 V, ISD = 2.4A,

Reverse Recovery Charge

Qrr

di/dt = 100 A/μs (Note 1)

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.

2.0

4.0 V

3.6 5 Ω

300 350 pF

45 50 pF

10 13 pF

40 50 nC

4.2

nC

8.4

nC

40 60 ns

35 55 ns

90 120 ns

50 60 ns

2.0 A

8.0 A

1.4 V

180

ns

0.72

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-053.AA

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