C2577 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

零件编号

产品描述 (功能)

生产厂家

C2577

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A

ICBO

Collector Cutoff Current

VCB= 80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

hFE

DC Current Gain

IC= 2A; VCE= 4V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1.0MHz

fT

Current-Gain—Bandwidth Product

IE= -0.5A; VCE= 12V

 hFE Classifications

O

P

Y

50-100 70-140 90-180

2SC2577

MIN TYP. MAX UNIT

80

V

1.5

V

10 μA

10 μA

50

110

pF

20

MHz

SPTECH website：www.superic-tech.com

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