2N5205 查看數據表（PDF） - Digitron Semiconductors

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2N5205

SILICON CONTROLLED RECTIFIER

Digitron Semiconductors 

DIGITRON SEMICONDUCTORS

2N681-2N692, 2N5204-2N5207

SILICON CONTROLLED RECTIFIER

ELECTRICAL CHARACTERISTICS

Symbol

Characteristics

I2√t

Maximum I2√t capability for

individual device fusing (1)

VTM

IH

BLOCKING

dv/dt

IR(-) & ID(-)

SWITCHING

Maximum peak on-state voltage

Maximum holding current

Minimum critical rate of rise of

off-state voltage

Maximum reverse and off-state

current

VRRM & VDRM =

25 to 150V

200 & 250V

300V

400V

500V

600V

700V

800V

1000V

1200V

td

Typical delay time

di/dt

Maximum non-repetitive rate of

rise of turned-on current

VDM = 25 to 600 V

VDM = 700 to 800 V

TRIGGERING

PGM

Maximum peak gate power

PG(AV)

IGM

+VGM

-VGM

Maximum average gate power

Maximum peak positive gate

current

Maximum peak positive gate

voltage

Maximum peak negative gate

voltage

Maximum required DC gate

current to trigger

IGT

Typical DC gate current to

trigger

Note 1: I2t for time tx ≈ I2√t ● √tx

2N681-

2N692

1450

2

20 @ 25°C

100 typical

250 typical

IR(AV) & ID(AV)

(average values)

-

6.5

6.0

5.0

4.0

3.0

2.5

2.25

2.0

-

-

1

100

75

-

5

0.5

2

10

5

80

40

18.5

30

2N5204-

2N5207

5800

2.3

200 @-40°C

Units

A2√s

V

mA

Conditions

t = 0.1 to 10ms initial TJ ≤ 125°C,

VRRM following surge = 0

TJ = 25°C, IT(AV) = 16A(50A peak) – 2N681

IT(AV) = 22A (70A) peak – 2N5204

Anode supply = 24V, initial IT= 1.0A

100

250

IRM & IDM

(peak values)

-

-

-

-

-

-

3.3

-

2.5

2.0

1.7

V/µs

TJ = 125°C exponential to 100% rated VDRM

TJ = 125°C exponential to 67% rated VDRM

mA

TJ = 125°C, gate open circuited

1

-

-

100

µs

A/µs

TC = 25°C, VDM = rated VDRM, ITM = 10A dc

resistive circuit. Gate pulse: 10 V,

40Ω source, tp = 6µs, tr = 0.1µs

TC = 125°C, VDM = rated VDRM, ITM = 2 x

di/dt, gate pulse: 20V, 15 Ω, tp = 6µs,

tr = 0.1 µs maximum

TC = 125°C, VDM = 600V, ITM = 200A @

400Hz max. Gate pulse: 20V, 15Ω,

tp = 6µs, tr = 0.1µs max.

60

W

0.5

W

2

A

tp ≤ 5ms – 2N681

tp ≤ 500µs – 2N5204

-

V

5

V

TC = min rated value. Max. required gate

80

trigger current is the lowest value which

will trigger all units with 6V anode to

40

mA

cathode

TC = 25°C

20

TC = 125°C

30

TC = 25°C, 6V anode to cathode

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20130116

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