2N4953 查看數據表（PDF） - Fairchild Semiconductor
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2N4953 Datasheet PDF : 4 Pages
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Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown Voltage *
BV(BR)CBO Collector-Base Breakdown Voltage
BV(BR)EBO Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Reverse Base Current
On Characteristics *
IC = 10mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 40V, IE = 0
VEB = 3.0V, IC = 0
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
VCE = 10V, IC = 1.0mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
IC = 150mA, IB = 15mA
IC = 150mA, IB = 15mA
VCE = 10V, IC = 150mA
Cob
Output Capacitance
hfe
Small-Signal Current Gain
VCB = 10V, f = 1.0MHz
IC = 20mA, VCE = 10V,
f = 100MHz
ton
Turn-On Time
toff
Turn-Off Time
* Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0%
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Min. Typ. Max. Units
30
V
60
V
5.0
V
50
nA
50
nA
75
150
200
600
0.3
V
1.3
V
1.2
V
8.0 pF
2.5
40
ns
400 ns
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
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