DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MAC08BT1 查看數據表(PDF) - KEXIN Industrial

零件编号
产品描述 (功能)
生产厂家
MAC08BT1
Kexin
KEXIN Industrial Kexin
MAC08BT1 Datasheet PDF : 5 Pages
1 2 3 4 5
SMD Type
Sensitive Gate Triacs
MAC08BT1,MAC08MT1
Thyristor
Features
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50+0.2
-0.2
3.00+0.1
-0.1
4
1
2
3
2.9
4.6
0.90+0.2
-0.2
7.00+0.3
-0.3
0.70+0.1
-0.1
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
Absolute Maximum Ratings Ta = 25
Parameter
Peak Repetitive Forward and Reverse Blocking Voltage* MAC08BT1
MAC08MT1
Forward Current RMS
Peak Forward Surge Current, TA = 25
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power Forward, TA = 25
Average Gate Power Forward, TA = 25
Thermal Resistance, Junction to Ambient
Lead Solder Temperature( 1/16"from case, 10 s max)
Operating Junction Temperature Range @ Rated VRRM and VDRM
Storage Temperature Range
*TJ = 25 to 125 , RGK = 1 k
Symbol
VDRM
and
VRRM
IT(RMS)
ITSM
I2t
PGM
PGF(AV)
R JA
TJ
Tstg
Rating
200
600
0.8
8.0
0.4
5.0
0.1
156
230
-40 to +110
-40 to +150
Unit
V
V
A
A
A2s
W
W
/W
Electrical Characteristics (Ta = 25 ,RGK = 1 k unless otherwise noted.)
Parameter
Symbol
Testconditons
Min Max Unit
Peak Forward or Reverse TC = 25
Blocking Current
TC = 110
IDRM, IRRM VAK = Rated VDRM or VRRM
10
A
200
Forward "On" Voltage*1
VTM ITM = 1.1 A Peak @ TA = 25
1.9 V
Gate Trigger Current (Continuous dc)*2 TC = 25
IGT VD=12 V, RL = 100 Ohms
10 mA
Gate Trigger Voltage (Continuous dc)
VGT VD=12V,RL=100 Ohms
2.0 V
Holding Current
IH VD=12V,Gate Open,initiating current= 20mA
5 mA
Critical Rate of Rise of Commutation Voltage *
Critical Rate–of–Rise of Off State Voltage
(dv/dt)c
1.5
dv/dt
Vpk = Rated VDRM, TC= 110 , Gate Open,
Exponential Method
10
V/ s
V/ s
* f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/ mS On-State Current Duration = 2.0 mS,
VDRM = 200 V,Gate Unenergized, TC = 110 ,Gate Source Resistance = 150 , See Figure 10)
www.kexin.com.cn 1

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]