KBJ8M 查看數據表（PDF） - Yea Shin Technology Co., Ltd

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KBJ8M

TECHNICAL SPECIFCATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

Yea Shin Technology Co., Ltd 

DATA SHEET

SEMICONDUCTOR

KBJ8A THRU KBJ8M

TECHNICAL SPECIFCATIONS OF

SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE – 50 to 1000 Volts

CURRENT – 8.0 Amperes

KBJ(mm)

FEATURES

•Ideal for printed circuit board

H

•Surge overload rating: 170 Amperes peak

•High temperature soldering : 260OC / 10 seconds at terminals C

•Pb free product at available : 99% Sn above meet RoHS

environment substance directive request

MECHANICAL DATA

E

•Case：Molded plastic

•Epoxy：UL 94-V-0 rate flame reardant

•Terminal：MIL-STD-202E,Method 208 guaranteed

•Polarity：Symbols molded or marked on body

•Mounting position：Any

•Weight：4.6 grams

A

_

BL

K

J

D

G

P

N

M

R

KBJ

Dim

Min

Max

A

24.80 25.20

B

14.70 15.30

C

400 Nominal

D

17.20 17.80

E

0.90 1.10

G

7.30 7.70

H

3.10ψ 3.40ψ

J

3.30 3.70

K

1.90 2.10

L

9.30 9.70

M

2.50 2.90

N

3.40 3.80

P

4.40 4.80

R

0.60 0.80

All Dimensions in mm

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

SYMBOL KBJ8A KBJ8B KBJ8D KBJ8G KBJ8J KBJ8K KBJ8M UNITS

Maximum Recurrent Peak Reverse Voltage

VRRM

50

100 200 400 600 800 1000 Volts

Maximum RMS Bridge lnput Voltage

VRMS

35

70

140 280 420 560 700 Volts

Maximum DC Blocking Voltage

VDC

50

100 200 400 600 800 1000 Volts

Maximum Average Forward Output Current at Tc=100℃

Io

8.0

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC Method)

IFSM

170

Amps

Maximum Forward Voltage Drop per element at 4.0A DC

VF

1.0

Volts

Maximum DC Reverse Current at Rated @TA=25℃

IR

DC Blocking Voltage per element

@TA=100℃

10

uAmps

500

I2t Rating for Fusing (t<8.3ms)

I2t

127

A2Sec

Typical Junction Capacitance (Note 1)

CJ

40

PF

Typical Junction Capacitance (Note 2)

RθJA

8.6

℃/W

Operating Temperature Range

TJ

-55 to +150

℃

Storage Temperature Range

TSTG

-55 to +150

℃

NOTES： 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts

2.Thermal Resistance from Junction to Case per element Unit mounted on 300x300x1.6mm Aluminum plate heat-sinks.

http://www.yeashin.com

1

REV.02 20120305

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