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SNRVBD660CTT4G 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
SNRVBD660CTT4G
ONSEMI
ON Semiconductor ONSEMI
SNRVBD660CTT4G Datasheet PDF : 6 Pages
1 2 3 4 5 6
MBRD620CT, NRVBD620VCT, SBRV620CT Series
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
TC = 130°C (Rated VR)
Per Diode
Per Device
Peak Repetitive Forward Current,
TC = 130°C (Rated VR, Square Wave, 20 kHz)
Per Diode
MBRD/NRVBD/SBRV
Symbol 620CT 630CT 640CT 650CT 660CT
VRRM
20
30
40
50
60
VRWM
VR
IF(AV)
3
6
IFRM
6
Unit
V
A
A
Nonrepetitive Peak Surge Current (Surge applied at rated load
IFSM
75
A
conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2 ms, 1 kHz)
IRRM
1
A
Operating Junction Temperature (Note 1)
TJ
65 to +175
°C
Storage Temperature
Tstg
65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS PER DIODE
Characteristic
Maximum Thermal Resistance, JunctiontoCase
Maximum Thermal Resistance, JunctiontoAmbient (Note 2)
2. Rating applies when surface mounted on the minimum pad size recommended.
Symbol
RqJC
RqJA
Value
6
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
iF = 3 Amps, TC = 25°C
iF = 3 Amps, TC = 125°C
iF = 6 Amps, TC = 25°C
iF = 6 Amps, TC = 125°C
VF
V
0.7
0.65
0.9
0.85
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = 25°C)
(Rated dc Voltage, TC = 125°C)
iR
mA
0.1
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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