ACS1086S 查看數據表（PDF） - STMicroelectronics
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ACS1086S Datasheet PDF : 11 Pages
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Characteristics
1
Characteristics
ACS108-6S
Table 1. Absolute maximum ratings (Tamb = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state current
(full cycle sine wave, Tj initial = 25 °C)
TO-92
SOT-223
TO-92
f = 60 Hz
f = 50 Hz
Tlead = 75 °C
Tamb = 75 °C
Tamb = 61 °C
t = 16.7 ms
t = 20 ms
I²t I²t Value for fusing
tp = 10 ms
dI/dt
VPP
IGM
VGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2xIGT, tr ≤ 100 ns
Non repetitive line peak mains voltage(1)
Peak gate current
Peak positive gate voltage
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
f = 120 Hz
tp = 20 µs
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
1. according to test described by IEC 61000-4-5 standard and Figure 16
0.8
0.45
7.6
7.3
0.38
100
2
1
10
0.1
-40 to +150
-30 to +125
A
A
A2s
A/µs
kV
A
V
W
°C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
IGT (1)
VGT
VGD
IH (2)
IL(2)
dV/dt (2)
(dI/dt)c (2)
VOUT = 12 V, RL = 33 Ω
II - III
II - III
VOUT = VDRM, RL =3.3 kΩ, Tj = 125 °C
II - III
IOUT = 100 mA
IG = 1.2 x IGT
VOUT = 67% VDRM, gate open, Tj = 125 °C
Without snubber (15 V/µs), turn-off time ≤ 20 ms, Tj = 125 °C
MAX
MAX
MIN
MAX
MAX
MIN
MIN
VCL
ICL = 0.1 mA, tp = 1 ms, Tj = 125 °C
MIN
1. minimum IGT is guaranteed at 10% of IGT max
2. for both polarities of OUT referenced to COM
Value
10
1
0.15
25
30
500
0.3
650
Unit
mA
V
V
mA
mA
V/µs
A/ms
V
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