BSR302N 查看數據表（PDF） - TY Semiconductor
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BSR302N Datasheet PDF : 3 Pages
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Product specification
Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Symbol Conditions
R thJA
BSR302N
min.
Values
typ.
Unit
max.
-
-
250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
30
-
Gate threshold voltage
V GS(th) V DS=VGS , I D=30 µA
1.2
1.7
Drain-source leakage current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
-
-V
2
1 μA
V DS=30 V, V GS=0 V,
T j=150 °C
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=2.9 A
-
V GS=10 V, I D=3.7 A
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=3.7 A
-
100
-
100 nA
26
36 mΩ
18
23
12
-S
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