BCP56-16(2003) 查看數據表（PDF） - Diotec Semiconductor Germany

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BCP56-16
(Rev.:2003)

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

BCP 54, BCP 55, BCP 56

Characteristics (Tj = 25/C)

DC current gain – Kollektor-Basis-Stromverhältnis 1)

BCP 5x-6 hFE

VCE = 2 V, IC = 150 mA

BCP 5x-10 hFE

BCP 5x-16 hFE

VCE = 2 V, IC = 5 mA

VCE = 2 V, IC = 500 mA

BCP 54... hFE

BCP56 hFE

Base-Emitter voltage – Basis-Emitter-Spannung 1)

VCE = 2 V, IC = 500 mA

Gain-Bandwidth Product – Transitfrequenz

VBEon

VCE = 5 V, IC = 10 mA, f = 100 MHz

DC current gain ratio of the complement. pairs

Verhältnis der Stromverst. complement. Paare

fT

' hFE1 hFE2

Thermal resistance – Wärmewiderstand

junction to ambient air – Sperrschicht zu umgebender Luft

junction to soldering point – Sperrschicht zu Lötpad

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

40

–

100

63

–

160

100

–

250

63

–

–

40

–

–

–

–

1V

– 130 MHz –

–

–

1.6

RthA

95 K/W 2)

RthS

14 K/W

BCP 51, BCP 52, BCP 53

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

27

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