BCP51 查看數據表（PDF） - Unspecified

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产品描述 (功能)

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BCP51

TRANSISTOR (PNP)

Unspecified 

SEMICONDUCTOR

TECHNICAL DATA

BCP53

BCP51,52,53 TRANSISTOR (PNP)

FEATURES

For AF driver and output stages

High collector current

Low collector-emitter saturation voltage

Complementary types: BCP54...BCP56 (NPN)

SOT-223

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RA TINGS (Ta=25℃ unless other wise noted)

Symbol

V CBO

V CEO

V EBO

IC

PC

RθJA

Tstg

Para meter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Storage Temperature Range

BCP51

-45

-45

BCP52

-60

-60

-5

-1

1.5

94

-65~+150

BCP53

-100

-80

Unit

V

V

V

A

W

℃/W

℃

ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Base-emitter breakdown voltage

Collector cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

BCP51

BCP52

BCP53

BCP51

BCP52

BCP53

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE

fT

Test conditions

IC=- 0.1mA,IE=0

IC= -10mA,IB=0

IC= -10μA,IE=0

VCB= -30 V, IE=0

VCE=-2V, IC=-5mA

VCE= -2V, IC=-150m A

VCE= -2V, IC=-500m A

IC=-500mA,IB=-50mA

VCE=-2V, IC=-500m A

VCE=-10V,IC=-50mA,f=100MHz

Min

-45

-60

-100

-45

-60

-80

-5

25

63

25

100

Max Unit

V

V

V

-100 nA

250

-0.5

V

-1

V

MHz

CLASSIFICA TION OF hFE(2)

Rank

BCP51-10, BCP52-10, BCP53-10

Range

63-160

BCP51-16, BCP52-16, BCP53-16

100-250

2015. 01. 18

Revision No : 0

1/3

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