BCP56-16 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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BCP56-16

SOT-223 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-223 Plastic-Encapsulate Transistors

BCP54,55,56 TRANSISTOR (NPN)

SOT-223

FEATURES

z For AF driver and output stages

z High collector current

z Low collector-emitter saturation voltage

z Complementary types: BCP51 ... BCP53 (PNP)

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

1. BASE

2. COLLECTOR

3. EMITTER

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Storage Temperature Range

BCP54

45

45

BCP55

60

60

5

1

1.5

83.3

-65~+150

BCP56

100

80

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Unit

V

V

V

A

W

℃/W

℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Base-emitter breakdown voltage

Collector cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

BCP54

BCP55

BCP56

BCP54

BCP55

BCP56

Symbol Test conditions

V(BR)CBO IC= 0.1mA,IE=0

V(BR)CEO IC= 10mA,IB=0

V(BR)EBO

ICBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE

fT

IE= 10μA,IC=0

VCB= 30 V, IE=0

VCE= 2V, IC=5mA

VCE= 2V, IC=150m A

VCE= 2V, IC=500m A

IC=500mA,IB=50mA

VCE=2V, IC=500m A

VCE=10V,IC=50mA,f=100MHz

Min

45

60

100

45

60

80

5

25

63

25

100

Max Unit

V

V

V

100

nA

250

0.5

V

1

V

MHz

CLASSIFICATION OF hFE(2)

Rank

BCP54-10, BCP55-10, BCP56-10

Range

63-160

Marking

BCP54-10, BCP55-10, BCP56-10

BCP54-16, BCP55-16, BCP56-16

100-250

BCP54-16, BCP55-16, BCP56-16

www.cj-elec.com

1

G,Jan,2017

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