BC807-25W 查看數據表（PDF） - Galaxy Semi-Conductor
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BC807-25W Datasheet PDF : 5 Pages
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Production specification
PNP Silicon Epitaxial Planar Transistor
BC807W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0
-50
V
Collector-emitter breakdown
voltage
V(BR)CEO IC=-10mA,IB=0
-45
V
Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0
-5
V
Collector cut-off current
VCB=-20V,IE=0
ICBO
VCB=-20V,IE=0,TA=150℃
-0.1 μA
-50 μA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
VEB=-4V,IB=0
VCE=-1V,IC=-100mA
BC807-16W
BC807-25W
BC807-40W
VCE=-1V,IC=-300mA
BC807-16W
BC807-25W
BC807-40W
IC=-500mA, IB=-50mA
-0.1 μA
100 160 250
160 250 400
250 350 600
60
100
170
-0.7 V
Base-emitter voltage
Transition frequency
Collector-base capacitance
VBE(sat)
fT
Ccb
IC=-500mA, IB=-50mA
VCE=-5V, IC=-50mA
f=100MHz
VCB=-10V,f=1MHz
-1.2 V
200
MHz
10
pF
Emitter-base capacitance
Ceb
VEB=-0.5V,f=1MHz
60
pF
F044
Rev.A
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