TIP142 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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TIP142 Datasheet PDF : 3 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
TIP142
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A ,IB= 40mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff current
IC= 10A ; VCE= 4V
VCB= 100V, IE= 0
ICEO
Collector Cutoff current
VCE= 50V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
Switching Times
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
VCC = 30 V, IC = 5.0 A,
IB = 20 mA;
Duty Cycle≤20%
IB1 = IB2,
RC & RB Varied,
TJ = 25℃
MIN TYP. MAX UNIT
100
V
2.0
V
3.0
V
3.5
V
3.0
V
1
mA
2
mA
2
mA
1000
500
0.15
μs
0.55
μs
2.5
μs
2.5
μs
SPTECH website：www.superic-tech.com
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