TIP563 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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TIP563 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
TIP562
TIP563
IC=10mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1.66A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 1.66A
ICEO
Collector
Cutoff Current
TIP562
TIP563
VCE= 270V;IB= 0
VCE= 360V;IB= 0
ICBO
Collector
Cutoff Current
TIP562
TIP563
VCB= 300V;IE= 0
VCB= 400V;IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
Switching Times
td
Delay Time
tr
Rise Time
tstg
Storage Time
VCC= 180V;VBE= -5.2V
IC= 10A; IB1= -IB2= 2A
tf
Fall Time
TIP562/563
MIN TYP. MAX UNIT
300
V
400
1.2
V
2.0
V
1.4
V
1.0
mA
1.0
0.1
mA
0.1
5.0 mA
20
8
0.05
μs
0.5
μs
1.2
μs
0.3
μs
SPTECH website：www.superic-tech.com
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