BDW74D 查看數據表（PDF） - Power Innovations
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BDW74D Datasheet PDF : 6 Pages
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Copyright © 1997, Power Innovations Limited, UK
BDW74, BDW74A, BDW74B, BDW74C, BDW74D
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
q Designed for Complementary Use with
BDW73, BDW73A, BDW73B, BDW73C and
BDW73D
q 80 W at 25°C Case Temperature
B
q 8 A Continuous Collector Current
C
q Minimum hFE of 750 at 3 V, 3 A
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
BDW74
BDW74A
BDW74B
BDW74C
BDW74D
BDW74
BDW74A
BDW74B
BDW74C
BDW74D
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TA
-45
-60
-80
V
-100
-120
-45
-60
-80
V
-100
-120
-5
V
-8
A
-0.3
A
80
W
2
W
75
mJ
-65 to +150
°C
-65 to +150
°C
-65 to +150
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
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