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FXL2TD245 查看數據表(PDF) - ON Semiconductor

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FXL2TD245 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
DC Electrical Characteristics (Continued)
Symbol Parameter
Conditions
IOFF
IOZ
ICCA/B
Power Off Leakage
Current
3-STATE Output
Leakage(5)
0 VO 3.6V
VI = VIH or VIL
Quiescent Supply
Current(6)
An, VI or VO = 0V to 3.6V
Bn, VI or VO = 0V to 3.6V
An, Bn OE = VIH
Bn,
OE = Don't Care
An,
OE = Don't Care
VI = VCCI or GND; IO = 0
ICCZ
Quiescent Supply VI = VCCI or GND; IO = 0
Current(6)
ICCA
ICCB
ICCA/B
Quiescent Supply
Current
Quiescent Supply
Current
Increase in ICC per
Input; Other Inputs
at VCC or GND
VI = VCCA or GND; IO = 0
VI = VCCA or GND; IO = 0
VI = VCCB or GND; IO = 0
VI = VCCB or GND; IO = 0
VIH = 3.0
Notes:
3. VCCI = the VCC associated with the data input under test.
4. VCCO = the VCC associated with the output under test.
5. Don't Care = Any valid logic level.
6. Reflects current per supply, VCCA or VCCB.
VCCI (V)
0
3.6
3.6
0
3.6
VCCO (V)
3.6
0
3.6
3.6
0
1.1–3.6 1.1–3.6
1.1–3.6 1.1–3.6
0
1.1–3.6
1.1–3.6
0
3.6
1.1–3.6
0
0
1.1–3.6
3.6
Min.
Max.
±10.0
±10.0
±10.0
+10.0
+10.0
20.0
Units
µA
µA
µA
20.0
µA
-10.0
µA
10.0
µA
-10.0
µA
10.0
µA
500
µA
©2005 Fairchild Semiconductor Corporation
FXL2TD245 Rev. 1.0.4
5
www.fairchildsemi.com

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