1B4B42 查看數據表（PDF） - New Jersey Semiconductor
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1B4B42 Datasheet PDF : 2 Pages
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rtMl INV) MHU UnMI\MUI CIMOI IV^ L,UKVea I HD,O,j;jtDt^
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
N
V
*
\z RESISTIVE
\
\
NDUCTIVE LOf
25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
LU
g LU
3m
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PER BRIDGE ELEMENT
\
40
X
< •*:
§z
£|
S <->
10
Q_
\
-^
150"C
I
I
SINGLE SINE-WAVE
(JEDEC METHOD)
ks
s^
"
2
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
oLU:
LU
Q.
11
z
LaU:
OL
=3
CJ
Q 01
QL
0 u_
0.01
/
^4:
1
Pu se Width = 300 us —
I
2% Duty Cycle
=-==41 44
_j_ TJ = 25 'C
0 2 0.4 0,6 0 8 1 0 1 2 14 1.6 1 8 2.0
FORWARD VOLTAGE VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
1 1 1 1 1—H
I
Ul
—-.
N
LLJ
a
T 125
Q,
^—
.-^-^
^-~~
O
HI
O
^ K
LU 1 0
O
^ 0,1
m
a:
^.
T
1
' 5'C
^/
tf^'
^-" ^
-^
0.01
c 20 40 60 80 100 120 140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
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