BYG24D-M3/TR 查看數據表（PDF） - Vishay Semiconductors
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BYG24D-M3/TR Datasheet PDF : 4 Pages
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BYG24D-M3/HM3, BYG24G-M3/HM3, BYG24J-M3/HM3
www.vishay.com
Vishay General Semiconductor
100
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
1.8
1.6
VR = VRRM
Half Sine-Wave
1.4
RθJA = 25 K/W
1.2
1.0
RθJA = 125 K/W
0.8
0.6
0.4
RθJA = 150 K/W
0.2
0.0
0
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Fig. 4 - Average Forward Current vs. Ambient Temperature
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
30
f = 1 MHz
25
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 23-Feb-16
3
Document Number: 89475
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