DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

X0402MF 查看數據表(PDF) - New Jersey Semiconductor

零件编号
产品描述 (功能)
生产厂家
X0402MF
NJSEMI
New Jersey Semiconductor NJSEMI
X0402MF Datasheet PDF : 1 Pages
1
20 STERN AVE
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Thyristors
, One.
TELEPHONE: (973) 376-2922
(212) 227-6005
X0402MF
APPLICATIONS
• Highly sensitive triggering levels
• For capacitive discharge ignitions, motor control
in kitchen aids, overvoltage crowbar protection
in low power supplies applications.
9
ill
KAG
1 cathode
2anode
|_10.0MAX „
7
rJi
-Iffj
254-H 254
-Ji-
' £5
05
i
\ T ? *5
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
'T(AV) On-state current 180° conduction angle
ITSM Non-repetitive surge peak on-state current t= 20ms
PG(AV) Average gate power dissipation Tj = 125°C
Tj
Junction temperature
Tstg Storage temperature
MIN
UNIT
600
V
600
V
4
A
20
A
0.2
W
125
-40 to + 1 50 °C
ELECTRICAL CHARACTERISTICS (Tc=25'C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current VRM=VRRM, ^GK=1 ^^
VRM=VRRM, RGK=1kQ,Tj=125°C
IDRM
Repetitive peak off-state current VDM=VDRM, RGK=1kQ
VDM=VDRM,RGK=I k Q ,Tj=125°C
VTM On-state voltage
ITM= 4A
MIN MAX UNIT
5
500
MA
5
500
uA
1.7 V
IGT
Gate-trigger current
VDM=12V;RL=140Q
200 uA
VGT Gate-trigger voltage
VDM=12V;RL=140Q
0.8 V
JH
Holding current
IT= 0.05A
5 mA
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]