1SS193 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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1SS193 Datasheet PDF : 4 Pages
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1SS193
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
● Low forward voltage
● Fast reverse recovery time
SOT- 23
3
Applications
● Extreme fast switches
Marking:
● F3
2
1
1
3
2
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IFM
IO
IFSM
PD
RθJA
TJ
TSTG
Limit
85
80
300
100
2.0
150
833
150
-55~+150
Unit
V
V
mA
mA
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol Min Typ Max Unit
Reverse breakdown voltage
V(BR)
80
V
VF1
0.60
V
Forward voltage
VF2
VF3
IR1
Reverse current
IR2
Capacitance between terminals
CT
0.72
V
0.90 1.2
V
0.1
uA
0.5
uA
0.9
3.0
pF
Reverse recovery time
t rr
1.6
4.0
ns
Conditions
IR=100μA
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0,f=1MHz
IF=IR=10mA,Irr=0.1×IR
High Diode Semiconductor
1
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