R1200F 查看數據表（PDF） - Diode Semiconductor Korea
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R1200F Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
R1200F --- R2000F
FIG.1 -- FORWARD DERATING CURVE
0.5
R1200F - R1800F
0.4
0.3
0.2
R2000F
0.1
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0
25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE,
FIG.2 -- TYPICAL FORWARD CHARACTERISTICS
10
TJ=25
Pulse Width=300µs
R1200F-
R1800F
1.0
0.1
R200F
0.01
0.6
1.6
2.6
3.6
4.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- PEAK FORWARD SURGE CURREENT
30
TJ=125
8.3ms Single Half
20
Sine - Wave
10
0
1
10
100
NUMBER OF CYCLES AT 60HZ
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
100
10
TJ=25
01
4
10
100
REVERSE VOLTAGE,VOLTS
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