5A200 查看數據表（PDF） - Diode Semiconductor Korea
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5A200 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
5A50 - - - 5A1000
FIG.1 -- FORWARD DERATING CURVE
8
7
6
5
4
3
2
1
0
0
S in g le P h a se
H a lf W a ve 6 0 H Z
R e sistive o r
In d u ctiv e L o a d
25 50 75
100 125 150 175
AMBIENT TEMPERATURE,
FIG.2 -- TYPICAL FORWARD CHARACTERISTICS
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6
TJ=25
Pulse Width=300uS
0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- MAXIMUM NON-REPETITIRE FORWARD
SURGE CURRENT
400
300
TJ=125℃
8.3ms Single Half
Sine-Wave
200
100
0
1
2 4 8 10 20 40 60 80 100
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
200
f=1MHz
TJ=25
100
10
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, VOLTS
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