B0520LWS 查看數據表（PDF） - Galaxy Semi-Conductor

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产品描述 (功能)

生产厂家

B0520LWS

Schottky Barrier Diode

Galaxy Semi-Conductor 

Production specification

Schottky Barrier Diode

B0520LWS/B0530WS/B0540WS

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Minimum Reverse

Breakdown Voltage

Maximum Forward Voltage

Drop

Maximum Leakage Current

Reverse Recovery Time

Junction Capacitance

Symbol

V(BR)R

VFM

IRM

trr

CJ

B0520LW S

20

-

-

0.300

0.385

-

75

-

250

-

-

B0530WS

-

30

-

0.375

0.430

-

-

20

-

130

-

4

170

B0540WS Unit

-

-

V

40

-

0.510

V

0.620

-

-

10

μA

-

20

ns

pF

Test Conditions

IR= 250μA

IR= 130μA

IR= 20μA

IF = 0.1A

IF = 0.5A

IF = 1.0A

VR = 10V

VR = 15V

VR = 20V

VR = 30V

VR = 40V

IF=IR=10mA

Irr=0.1XIR,RL=10

0Ω

f = 1MHz, VR =

0V DC

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

B008

Rev.A

www.gmesemi.com

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