P6SMB10A 查看數據表（PDF） - Cystech Electonics Corp.

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P6SMB10A

Surface Mount Transient Voltage Suppressors

Cystech Electonics Corp. 

CYStech Electronics Corp.

Spec. No. : C766SB

Issued Date : 2009.05.18

Revised Date :

Page No. : 3/5

Electrical Characteristics(Cont.)

Device

Device

Marking

Code

UNI BI

Breakdown

Voltage

V(BR)

(V) 1

Min Max

Maximum

Maximum Maximum

Test Standoff reverse Maximum clamping temperature

current voltage leakage at peak pulse voltage at coefficient

at IT VWM

VWM

Current

IPPM

of

(mA) (V)

ID3

IPPM2

VC

V(BR)

(μA)

(A)

(V)

(%/°C)

P6SMB220A 220A 220C 209 231 1.0 185

1.0

1.8

328

0.108

P6SMB250A 250A 250C 237 263 1.0 214

1.0

1.7

344

0.108

P6SMB300A 300A 300C 285 315 1.0 256

1.0

1.4

414

0.108

P6SMB350A 350A 350C 333 368 1.0 300

1.0

1.2

482

0.108

P6SMB400A 400A 400C 380 420 1.0 342

1.0

1.1

548

0.108

P6SMB440A 440A 440C 418 462 1.0 376

1.0

1.0

602

0.108

P6SMB480A 480A 480C 456 504 1.0 408

1.0

0.9

658

0.108

P6SMB510A 510A 510C 485 535 1.0 434

1.0

0.9

698

0.108

P6SMB530A 530A 530C 503.5 556.5 1.0 450

1.0

0.8

725

0.108

P6SMB540A 540A 540C 513 567 1.0 459

1.0

0.8

740

0.108

P6SMB550A 550A 550C 522.5 577.5 1.0 495

1.0

0.8

760

0.108

Note: 1.V(BR) measured after IT applied for 300μs, IT=square wave pulse or equivalent

2.Surge current waveform per Fig. 3 and derate per Fig.2

3.For bidirectional types with VWM of 10 volts and less, the ID limit is doubled

4.All terms and symbols are consistent with ANSI/IEEE C62.35

P6SMB6.8A thru P6SMB550CA

CYStek Product Specification

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